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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3981 DESCRIPTION *Collector-Base Breakdown Voltage: V(BR)CBO= 900V(Min.) *Wide Area of Safe Operation *High Speed Switching * APPLICATIONS *Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO IC Emitter-Base Voltage w w scs .i w 900 V 900 V 800 V 7 V 5 A 10 A 3 A .cn mi e Collector Current-Continuous ICM Collector Current-Peak IB B Base Current-Continuous Collector Power Dissipation @Ta=25 3 W PC Collector Power Dissipation @TC=25 Tj Junction Temperature 80 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3981 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 800 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A B 1.5 V VBE(sat) ICBO IEBO Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A B 1.5 V A A Collector Cutoff Current VCB= 900V; IE= 0 VEB= 7V; IC= 0 50 Emitter Cutoff Current 50 hFE-1 DC Current Gain IC= 0.1A; VCE= 5V hFE-2 DC Current Gain fT Current-Gain--Bandwidth Product Switching Times ton ts tf Turn-on Time Storage Time ww w scs .i IC= 3A; VCE= 5V IC= 0.5A; VCE= 5V; f= 1MHz .cn mi e 8 6 15 MHz 0.7 s s s IC= 3A; IB1= 0.6A; IB2= -1.2A; VCC= 250V 2.5 Fall Time 0.3 isc Websitewww.iscsemi.cn |
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